Developed for thermal management of high-power components and wafers, IOTA 69550 reaches thermal conductivity of 2.2 W/m·K with low thermal resistance variation. It continuously dissipates chip heat to prevent overheating damage. Featuring 3.2 MPa shear strength on aluminum substrates, it integrates structural fixation and heat conduction. Perfect for wafer bonding, lamination of high-power heating parts, thermal sealing of MOS tubes and industrial equipment housings. The flexible cured layer relieves internal stress caused by thermal expansion to protect precision electronic components. Processable by dispensing and screen printing, it serves as durable thermal bonding material for new energy and semiconductor high-power devices.